Part Number Hot Search : 
IRG4B KBJ604G FOX924E SRAF1630 D1252 P2301 2SC5431 C100LVE
Product Description
Full Text Search
 

To Download ARF664S33 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 POSEICO
POSEICO SPA POwer SEmiconductors Italian COrporation
POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510
FAST RECOVERY DIODE
FOR IGBT,IEGT,GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY TARGET SPECIFICATION
gen 03 - ISSUE : 1
ARF664
Repetitive voltage up to Mean forward current Surge current 3300 V 1000 A 18 kA
Symbol
Characteristic
Conditions
Tj [C]
Value
Unit
BLOCKING
V V I V
RRM RSM RRM DC LINK
Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current Permanent DC voltage V=VRRM
125 125 125 125
3300 3400
V V mA
1500
V
CONDUCTING
I I I
F (AV) F (AV) FSM
Mean forward current Mean forward current Surge forward current I t Forward voltage Threshold voltage Forward slope resistance
180 sin ,50 Hz, Th=55C, double side cooled 180 square,50 Hz,Th=55C,double side cooled Sine wave, 10 ms reapplied reverse voltage up to 50% VRSM Forward current = 1570 A 125
1000 1025 18 1620 x1E3 25 125 125 3.55 1.80 0.70
A A kA As V V mohm
I t V V r
FM F(TO) F
SWITCHING
Q rr I rr t rr Q rr I rr s E V
OFF FR
Reverse recovery charge Peak reverse recovery current Reverse recovery time Reverse recovery charge Peak reverse recovery current Softness (s-factor), min Turn off energy dissipation Peak forward recovery
IF= VR = IF= di/dt= VR =
1000 A 100 V 1100 A 500 A/s V
di/dt=
250 A/s
125 125
C A s 2000 C A
125
1100
J di/dt= 500 A/s 125 V
MOUNTING
R th(j-h) R th(c-h) T F
j
Thermal impedance Thermal impedance Operating junction temperature Mounting force Mass
Junction to heatsink, double side cooled Case to heatsink, double side cooled
21 6 00 / 125
C/kW C/kW C kN g
22.0 / 24.5 520
ORDERING INFORMATION : ARF664 S 33 standard specification
VRRM/100
ARF664 FAST RECOVERY DIODE
TARGET SPECIFICATION gen 03 - ISSUE : 1
POSEICO
POSEICO SPA POwer SEmiconductors Italian COrporation
FORWARD CHARACTERISTIC Tj = 125 C 20 5000 4500 4000 Forward Current [A] 3500 ITSM [kA] 3000 2500 2000 1500 1000 500 0 0.7 1.7 2.7 3.7 4.7 Forward Voltage [V] 16 14 12 10 8 6 4 2 0 1 18
SURGE CHARACTERISTIC Tj = 125 C
10 n cycles
100
TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED
25.0
20.0
Zth j-h [C/kW]
15.0
10.0
5.0
0.0 0.001
0.01
0.1 t[s]
1
10
100
Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 m. In the interest of product improvement POSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported.


▲Up To Search▲   

 
Price & Availability of ARF664S33

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X